TOKYO, January 10, 2019 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today its development of the world's first* ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-leading range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems. With a power efficiency** rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

* According to Mitsubishi Electric research as of January 10, 2019
** Output power level equivalent to 6.5dB peak-to-average power ratio (PAPR) modulated signal

Ultra-wideband digitally controlled GaN amplifier

Key Features

Novel load modulation achieves wideband operation and contributes to large-capacity communication
- Mitsubishi Electric's novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier's high-efficiency operation, for wideband (1.4-4.8GHz) operation.
- Wide-band operation of amplifier supports several frequency bands.
Digital control realizes high-efficiency operation and reduces power consumption of mobile base stations
- Digitally controlled input signals for amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning function based on Maisart®***.
- Improved efficiency of amplifier helps to reduce power consumption in mobile base stations.
*** Mitsubishi Electric's AI creates the State-of-the-ART in Technology

Note that the releases are accurate at the time of publication but may be subject to change without notice.